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HAT2199R Silicon N Channel Power MOS FET Power Switching REJ03G0063-0300 Rev.3.00 Sep.23.2004 Features * * * * * High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 13.0 m typ. (at VGS = 10 V) Outline SOP-8 56 7 8 DD D D 5 76 8 4 G 3 12 4 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain SSS 123 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Drain to source voltage VDSS 30 Gate to source voltage VGSS 20 Drain current ID 11 Note1 Drain peak current ID(pulse) 88 Body-drain diode reverse drain current IDR 11 Avalanche current IAP Note 2 11 Avalanche energy EAR Note 2 12.1 Channel dissipation Pch Note3 2.0 Channel to ambient thermal impedance ch-a Note3 62.5 Channel temperature Tch 150 Storage temperature Tstg -55 to +150 Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tch = 25C, Rg 50 3. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10s Unit V V A A A A mJ W C/W C C Rev.3.00, Sep.23.2004, page 1 of 7 HAT2199R Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Gate Resistance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Notes: 4. Pulse test Symbol V(BR)DSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss Rg Qg Qgs Qgd td(on) tr td(off) tf VDF trr Min 30 -- -- 1.0 -- -- 12 -- -- -- -- -- -- -- -- -- -- -- -- -- Typ -- -- -- -- 13.0 17.0 20 1060 255 85 1.5 7.5 3.1 1.8 8.0 16 37 3.6 0.84 18 Max -- 0.1 1 2.5 16.5 25.0 -- -- -- -- -- -- -- -- -- -- -- -- 1.10 -- Unit V A A V m m S pF pF pF nC nC nC ns ns ns ns V ns Test Conditions ID = 10 mA, VGS = 0 VGS = 20 V, VDS = 0 VDS = 30 V, VGS = 0 VDS = 10 V, I D = 1 mA ID = 5.5 A, VGS = 10 V Note4 ID = 5.5 A, VGS = 4.5 V Note4 ID = 5.5 A, VDS = 10 V Note4 VDS = 10 V VGS = 0 f = 1 MHz VDD = 10 V VGS = 4.5 V ID = 11 A VGS = 10 V, ID = 5.5 A VDD 10 V RL = 1.81 Rg = 4.7 IF = 11 A, VGS = 0 Note4 IF = 11 A, VGS = 0 diF/ dt = 100 A/ s Rev.3.00, Sep.23.2004, page 2 of 7 HAT2199R Main Characteristics Power vs. Temperature Derating 4.0 Pch (W) ID (A) Maximum Safe Operation Area 500 10 Test Condition : When using the glass epoxy board (FR4 40x40x1.6 mm), PW < 10 s 3.0 100 DC s 10 Channel Dissipation Drain Current Op PW era 1m =1 n( s s 10 0 s 2.0 tio 0m 1 Operation in this area is 0.1 limited by RDS(on) PW N < 1 ote 0s 4 ) 1.0 0 50 100 150 Ta (C) 200 Ambient Temperature Ta = 25C 1 shot Pulse 0.01 0.1 0.3 1 3 10 30 100 Drain to Source Voltage VDS (V) Note 4 : When using the glass epoxy board (FR4 40x40x1.6 mm) Typical Output Characteristics 10 10 V 4.5 V 10 Pulse Test 2.8 V 2.7 V Typical Transfer Characteristics VDS = 10 V Pulse Test 8 ID (A) Drain Current ID (A) 8 6 2.6 V 2.5 V 6 Tc = 75C 25C 2 -25C 1 2 3 Gate to Source Voltage 5 4 VGS (V) Drain Current 4 4 2 VGS = 2.4 V 0 2 4 6 Drain to Source Voltage 8 VDS 10 (V) 0 Drain to Source Saturation Voltage vs. Gate to Source Voltage VDS(on) (mV) Pulse Test 200 Drain to Source On State Resistance RDS(on) (m) 250 Static Drain to Source on State Resistance vs. Drain Current 100 Pulse Test 50 VGS = 4.5 V 20 10 5 2 1 1 10 100 Drain Current ID (A) 1000 10 V Drain to Source Voltage 150 ID = 10 A 100 5A 50 2A 4 8 12 Gate to Source Voltage 16 VGS (V) 20 0 Rev.3.00, Sep.23.2004, page 3 of 7 HAT2199R Static Drain to Source on State Resistance vs. Temperature 50 Pulse Test 40 ID = 2 A, 5 A, 10 A Forward Transfer Admittance vs. Drain Current Static Drain to Source on State Resistance RDS(on) (m) Forward Transfer Admittance |yfs| (S) 1000 100 Tc = -25C 30 20 VGS = 4.5 V 10 25C 1 75C VDS = 10 V Pulse Test 0.1 0.3 1 3 10 30 100 10 0 -25 10 V 2 A, 5 A, 10 A 0 25 50 75 100 125 150 Case Temperature Tc (C) Body-Drain Diode Reverse Recovery Time Drain Current ID (A) Typical Capacitance vs. Drain to Source Voltage 10000 3000 Ciss 1000 300 100 30 10 0 5 10 15 20 Crss Coss 100 Reverse Recovery Time trr (ns) 50 20 di/dt = 100 A/s VGS = 0, Ta = 25C 1 10 100 Reverse Drain Current IDR (A) Capacitance C (pF) 10 0.1 VGS = 0 f = 1 MHz 25 (V) 30 Drain to Source Voltage VDS Switching Characteristics 20 1000 VGS = 10 V, VDS = 10 V Rg = 4.7 , duty < 1 % Dynamic Input Characteristics (V) 50 VDS VGS Drain to Source Voltage Gate to Source Voltage 30 VDD = 25 V 10 V 5V VDS VGS 12 Switching Time t (ns) 40 16 (V) ID = 11 A 100 td(off) 20 8 VDD = 25 V 10 V 5V 10 tr 1 0.1 td(on) tf 10 4 0 20 0 4 8 12 16 Gate Charge Qg (nc) 1 Drain Current 10 ID 100 (A) Rev.3.00, Sep.23.2004, page 4 of 7 HAT2199R Reverse Drain Current vs. Source to Drain Voltage Repetitive Avalanche Energy EAR (mJ) Maximum Avalanche Energy vs. Channel Temperature Derating 20 IAP = 11 A VDD = 15 V duty < 0.1 % Rg > 50 10 (A) 8 Reverse Drain Current IDR 10 V 5V VGS = 0 V 16 6 12 4 8 2 Pulse Test 0 0.4 0.8 1.2 1.6 VSD (V) 2.0 Source to Drain Voltage 4 0 25 50 75 100 125 150 Channel Temperature Tch (C) Normalized Transient Thermal Impedance vs. Pulse Width 10 Normalized Transient Thermal Impedance s (t) 1 D=1 0.5 0.1 0.2 0.1 0.01 0.05 0.02 0.01 1s h p ot uls e ch - f(t) = s (t) x ch - f ch - f = 100C/W, Ta = 25C When using the glass epoxy board (FR4 40 x 40 x 1.6 mm) PDM PW T 0.001 D= PW T 0.0001 10 100 1m 10 m 100 m 1 10 100 1000 10000 Pulse Width PW (s) Rev.3.00, Sep.23.2004, page 5 of 7 HAT2199R Avalanche Test Circuit Avalanche Waveform EAR = 1 2 L * IAP2 * VDSS VDSS - V DD V DS Monitor L I AP Monitor V (BR)DSS I AP VDD ID V DS Rg Vin 15 V D. U. T 50 0 VDD Switching Time Test Circuit Vin Monitor Rg D.U.T. RL V DS = 10 V Vin Vout Vin 10 V Vout Monitor Switching Time Waveform 90% 10% 10% 90% td(on) tr 90% td(off) tf 10% Rev.3.00, Sep.23.2004, page 6 of 7 HAT2199R Package Dimensions As of January, 2003 Unit: mm 4.90 5.3 Max 5 8 1 4 3.95 *0.22 0.03 0.20 0.03 1.75 Max 0.75 Max 6.10 - 0.30 + 0.10 1.08 0 - 8 + 0.67 0.14 - 0.04 + 0.11 1.27 0.60 - 0.20 *0.42 0.08 0.40 0.06 0.15 0.25 M *Dimension including the plating thickness Base material dimension Package Code JEDEC JEITA Mass (reference value) FP-8DA Conforms -- 0.085 g Ordering Information Part Name HAT2199R-EL-E Quantity 2500 pcs Taping Shipping Container Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.3.00, Sep.23.2004, page 7 of 7 Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein. RENESAS SALES OFFICES Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology (Shanghai) Co., Ltd. Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 http://www.renesas.com (c) 2004. Renesas Technology Corp., All rights reserved. Printed in Japan. Colophon .2.0 |
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